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A Ka/V Band-Switchable LNA With 2.8/3.4 dB Noise Figure
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A $0.13~\mu \text{m}$ SiGe BiCMOS band-switchable low noise amplifier (LNA) is developed which can be operated at 28 or 60 GHz. The LNA employs an LC tank at the input… Click to show full abstract
A $0.13~\mu \text{m}$ SiGe BiCMOS band-switchable low noise amplifier (LNA) is developed which can be operated at 28 or 60 GHz. The LNA employs an LC tank at the input to perform dual-band impedance matching, while the output is switched from one band to the other using a tunable stub. The stub is made tunable by using an HBT switch, which reduces the stub’s length when turned on shifting the LNA between 28 and 60 GHz modes. The switch has 1.2 dB ON- and 0.7 dB OFF-state losses. The measured results are /15 dB small signal gain, 2.8/3.4 dB noise figure, and −12/−7 dBm compression point (P1dB) at 28/60 GHz, respectively. The band-switchable compact LNA has a chip size of $0.48\times0.48$ mm2 and consumes a dc power of 8.2/21 mW at 2.5 V supply voltage. Among the research studies, this is the first demonstration of a 28/60 GHz dual-band LNA with a performance comparable to dedicated LNAs in each band.
