In this letter, the MOSFET small-signal equivalent circuit models under different bias conditions are analyzed for microwave applications. A novel parameter extraction technique named multi-parameter scanning (MPS) method is proposed.… Click to show full abstract
In this letter, the MOSFET small-signal equivalent circuit models under different bias conditions are analyzed for microwave applications. A novel parameter extraction technique named multi-parameter scanning (MPS) method is proposed. Under zero-bias, the MPS technique is used to extract the extrinsic parasitics and internal capacitances without using any high-frequency or low-frequency approximations. Extrinsic series resistances and substrate network are assumed to be bias-independent or at least have weak bias dependence. Therefore, after removing the extrinsic parasitics, the intrinsic elements in the saturation region can be formulated and directly extracted through linear-fitting to the measurement data. A set of nMOS test structures fabricated on the Shanghai Huali Microelectronics Corporation (HLMC) RF CMOS process are used for the investigation and validation of the proposed technique.
               
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