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Continuous-Wave Operation of GaAs-Based 1.5- $\mu$ m GaInNAsSb VCSELs

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We demonstrate the first electrically-pumped, GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1500 nm range that operate in continuous wave mode at and above room temperature. The VCSELs employ… Click to show full abstract

We demonstrate the first electrically-pumped, GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1500 nm range that operate in continuous wave mode at and above room temperature. The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum well active region, two n-doped AlGaAs/GaAs distributed Bragg reflectors and a GaAs tunnel junction. Continuous-wave single-mode lasing was observed up to 50 °C with room-temperature threshold current densities below 3 kA/cm2. Small signal measurements indicate that dilute nitride GaInNAsSb/GaNAs active regions are capable of high speed modulation.

Keywords: wave operation; gainnassb vcsels; gaas based; operation gaas; continuous wave; based gainnassb

Journal Title: IEEE Photonics Technology Letters
Year Published: 2019

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