In this letter, a beveled-mesa edge termination technology was developed to improve the performance of GaN p-i-n ultraviolet avalanche photodiodes (APDs). Simulation results showed that the beveled-mesa is effective in… Click to show full abstract
In this letter, a beveled-mesa edge termination technology was developed to improve the performance of GaN p-i-n ultraviolet avalanche photodiodes (APDs). Simulation results showed that the beveled-mesa is effective in reduction of the electric field at the mesa sidewall. With a photoresist thermal-reflow process, 12°-angle beveled-mesa APDs were fabricated from homoepitaxial p-i-n structures on GaN substrate. The most beneficial property of the beveled-mesa termination is the uniform breakdown-characteristic of the beveled-mesa APDs compared to the vertical-mesa APDs. Record-high
               
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