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This article proposes that a modular multilevel converter (MMC) based on the integrated-gate commutated thyristor (IGCT) is a promising solution for future highvoltage dc (HVdc) applications. The system-level scheme and… Click to show full abstract
This article proposes that a modular multilevel converter (MMC) based on the integrated-gate commutated thyristor (IGCT) is a promising solution for future highvoltage dc (HVdc) applications. The system-level scheme and technical issues of the IGCT MMC are proposed, and the commutation behaviors of the IGCT and the snubber circuit in the MMC are analyzed. On this basis, the optimal designs of the anode inductor, power supply system, valve series, and submodule structure are proposed, and a comprehensive experimental platform is built. Detailed experiments are conducted, including a double-pulse switching experiment, a back-to-back power cycling experiment, and an MMC operation experiment. Furthermore, the correctness and effectiveness of the proposed IGCT MMC solution are verified.
Journal Title: IEEE Industrial Electronics Magazine
Year Published: 2019
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