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This paper presents a method for measuring the capacitance of superconductor–insulator–superconductor (SIS) junctions with a 4-K probe station. The probe station can be used to perform on-wafer characterization of sample… Click to show full abstract
This paper presents a method for measuring the capacitance of superconductor–insulator–superconductor (SIS) junctions with a 4-K probe station. The probe station can be used to perform on-wafer characterization of sample lots at frequencies ranging from dc to microwave. In our study, we evaluated SIS junctions that had a variety of areas, and estimated the capacitance after subtracting the parasitic elements of the probe contact pad. The results show that the
Journal Title: IEEE Transactions on Applied Superconductivity
Year Published: 2017
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