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Content Aware Refresh: Exploiting the Asymmetry of DRAM Retention Errors to Reduce the Refresh Frequency of Less Vulnerable Data
DRAM refresh is responsible for significant performance and energy overheads in a wide range of computer systems, from mobile platforms to datacenters [1] . With the growing demand for DRAM capacity… Click to show full abstract
DRAM refresh is responsible for significant performance and energy overheads in a wide range of computer systems, from mobile platforms to datacenters [1] . With the growing demand for DRAM capacity and the worsening retention time characteristics of deeply scaled DRAM, refresh is expected to become an even more pronounced problem in future technology generations [2] . This paper examines content aware refresh, a new technique that reduces the refresh frequency by exploiting the unidirectional nature of DRAM retention errors: assuming that a logical 1 and 0 respectively are represented by the presence and absence of charge, 1-to-0 failures are much more likely than 0-to-1 failures. As a result, in a DRAM system that uses a block error correcting code (ECC) to protect memory, blocks with fewer 1s can attain a specified reliability target (i.e., mean time to failure) with a refresh rate lower than that which is required for a block with all 1s. Leveraging this key insight, and without compromising memory reliability, the proposed content aware refresh mechanism refreshes memory blocks with fewer 1s less frequently. To keep the overhead of tracking multiple refresh rates manageable, refresh groups—groups of DRAM rows refreshed together—are dynamically arranged into one of a predefined number of refresh bins and refreshed at the rate determined by the ECC block with the greatest number of 1s in that bin. By tailoring the refresh rate to the actual content of a memory block rather than assuming a worst case data pattern, content aware refresh respectively outperforms DRAM systems that employ RAS-only Refresh, all-bank Auto Refresh, and per-bank Auto Refresh mechanisms by 12, 8, and 13 percent. It also reduces DRAM system energy by 15, 13, and 16 percent as compared to these systems.
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