LAUSR

Monolithic 3-D ICs (M3-D ICs) offer extremely high vertical interconnection density, significantly improving the power-performance envelope when compared to conventional 2-D ICs. However, process limitations lead to one tier having either degraded transistors or interconnects. This paper models the amount of degradation that can be expected at current and future nodes (45, 22, and 10 nm), develops a process development kit using these models to enable evaluation, and presents a block-level M3-D IC RTL-to-GDSII flow that is capable of mitigating some of this degradation. Experimental results indicate that at lower technology nodes, M3-D ICs offer more benefits. Results also indicate that the impact of transistor degradation is diminished at lower technology nodes while the impact of interconnect degradation becomes worse. Overall, perfect M3-D ICs close more than half the gap in the power-performance envelope between 2-D ICs and the “ideal” block-level design. While degraded tiers reduce the benefit of M3-D ICs, our degradation-aware floorplanner gives back up to 17% of the loss, and helps to obtain significant overall benefits compared to 2-D ICs.