With the ever-increasing transistor density and memory capability in integrated circuits, the high-sigma yield estimation has become a growing concern. This work presents an equiprobability-based local response surface (ELRS) method… Click to show full abstract
With the ever-increasing transistor density and memory capability in integrated circuits, the high-sigma yield estimation has become a growing concern. This work presents an equiprobability-based local response surface (ELRS) method that can perform a high-sigma yield estimation with both high accuracy and efficiency. Demonstrating with 6T-SRAM, the proposed method exhibits more than ten times improvement in accuracy when compared with the state-of-the-art while maintaining the efficiency to the best record in the literature.
               
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