LAUSR

Resistive random-access memory (ReRAM) with the crossbar structure is one promising candidate to be used as a next generation non-volatile memory device. In a crossbar ReRAM, in which a memristor is positioned on each row-column intersection, the sneak-path problem is one of the main challenges for a reliable readout. The sneak-path problem can be solved with additional selection devices. When some selection devices fail short, the sneak-path problem re-occurs. The re-occurred sneak-path problem is addressed in this paper. The re-occurred sneak-path event can be described combinatorially and its adverse effect can be modeled as a parallel interference. Based on a simple pilot construction, we probabilistically characterize the inter-cell dependency of the re-occurred sneak-path events. Utilizing this dependency, we propose adaptive thresholding schemes for resistive memory readout using side information provided by pilot cells. This estimation theoretic approach effectively reduces the bit-error rate while maintaining low redundancy overhead and low complexity.