LAUSR

This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC) developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1:1 power divider, two 25 GHz driver amplifiers (DA1,2), a 75 GHz passive frequency tripler, and a 75 GHz power amplifier (PA). By applying a bypass tuning capacitor based power enhancing technique in the single-ended DA and PA, the output power and power-added-efficiency (PAE) of the AMC have been effectively improved. Benefiting from the proposed passive tripler core with second harmonic suppression function, and the impedance matching network with frequency selection characteristics, the AMC presents better harmonic suppression performance compared with the conventional topology. The bias circuits with temperature compensation are applied to the DA and PA to ensure the performance of the AMC when the temperature changes. The AMC has a measured output power exceeding 0 dBm in the entire E-band frequency range with a peak output power of 10.9 dBm at 77 GHz, and exhibits a record PAE of 8.25 %. Within the 3 dB operating frequency range from 69 to 87 GHz, the rejection of fundamental and second harmonics are better than 33.5 dB. The AMC can work properly between −40°C and 125 °C with the proposed temperature compensation bias circuits.