Non-volatile memory (NVM) such as RRAM and PCM has become the key component in high energy efficiency computing-in-memory (CIM) architectures. However, the computing accuracy and energy efficiency improvement of conventional… Click to show full abstract
Non-volatile memory (NVM) such as RRAM and PCM has become the key component in high energy efficiency computing-in-memory (CIM) architectures. However, the computing accuracy and energy efficiency improvement of conventional 1T1R RRAM array based current sensing CIM scheme is hindered by device variation and large output current. In this work, we propose a voltage sensing differential column architecture (VSDCA) based on 1T2R RRAM array for binary memory and CIM applications. The memory mode of VSDCA macro can improve
               
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