LAUSR

In this article, we design and fabricate an ultra-low noise figure, multi-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using ${0.25~\mu \text {m}}$ GaAs pHEMT process. The proposed LNA’s performance results from a simultaneous match of optimal impedance for minimum noise figure and maximum power gain at the input. It also includes theoretical analysis of key factors in which simultaneous match of noise figure and input power gain depend. The presented LNA design can be re-configured anywhere in the frequency range from 1.8 to 5.0 GHz with the bandwidth of 200 MHz to 600 MHz. The experimentally reported performance of the proposed LNA includes a maximum 22 dB small signal gain, 18.6 dBm output power at 1-dB gain compression (OP1dB), 39.4 dBm output power at 3 $^{\mathrm{ rd}}$ -order intercept point (OIP3), and 0.35 dB minimum noise figure in the band 1.8 – 2.1 GHz while consuming only 0.165 W of dc power. Moreover, our LNA MMIC has an inbuilt input and output Electro-Static-Discharge (ESD) limiter, which can handle a 250 V charged device model (CDM) and 650 V human body model (HBM) according to JEDEC standards while occupying only ${0.32~\text {mm}^{2}}$ of area.