This brief presents an active equalizer circuit with positive gain slope at X-Band (8–12 GHz). Compared to passive examples, the active equalizer realized better filter and impedance characteristics in frequency… Click to show full abstract
This brief presents an active equalizer circuit with positive gain slope at X-Band (8–12 GHz). Compared to passive examples, the active equalizer realized better filter and impedance characteristics in frequency of interest with increased functionality for a single amplification stage. It achieved close to 10 dB of peak gain, a +1.13 dB/GHz gain slope with 2.8 dB noise figure (NF) by utilizing cascode topology. The design reaches a −1.5 dBm input-referred compression point (input-P1dB) while consuming 46 mW of power. To the best of authors’ knowledge, the presented work achieves the best on-chip gain, a gain slope and NF performance in the literature as an equalizer that utilizes SiGe BiCMOS technology.
               
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