LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS

Photo from wikipedia

In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to convert temperature into two sub-threshold biasing… Click to show full abstract

In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to convert temperature into two sub-threshold biasing currents. These are then used to define two oscillation frequencies, whose ratio increases linearly with the temperature. Change in the frequency ratio is finally translated into a digital output code. The proposed sensor was fabricated in 180-nm CMOS technology. When powered at 350 mV, it can achieve an energy/conversion of 0.46 nJ in a conversion time of 33 ms. Moreover, it exhibits a measurement resolution of 0.27°C and a resolution figure-of-merit as low as $0.034~{\mathrm{ nJ}}^\circ {\mathrm{ C}}^{2}$ .

Keywords: fully integrated; temperature sensor; 180 cmos; temperature; sensor

Journal Title: IEEE Transactions on Circuits and Systems II: Express Briefs
Year Published: 2022

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.