Tunneling heterojunctions (THJs) have confined states close to the tunneling region, which significantly affect their transport properties. Accurate numerical modeling of THJs requires combining the nonequilibrium coherent quantum transport through… Click to show full abstract
Tunneling heterojunctions (THJs) have confined states close to the tunneling region, which significantly affect their transport properties. Accurate numerical modeling of THJs requires combining the nonequilibrium coherent quantum transport through the tunneling region as well as the quasi-equilibrium statistics arising from the strong scattering in the confined states. In this paper, a novel atomistic model is proposed to include both the effects: the strong scattering in the regions around THJ and the coherent tunneling. The new model matches reasonably well with experimental measurements of Nitride THJ and provides an efficient engineering tool for performance prediction and design of THJ-based devices.
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2017
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