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We have already presented a compact model for FETs operating in the quasi-ballistic regime [1]. However, this model suffers from two important problems: 1) the profile for charge density along… Click to show full abstract
We have already presented a compact model for FETs operating in the quasi-ballistic regime [1]. However, this model suffers from two important problems: 1) the profile for charge density along the channel is not correctly accounted for and 2) current is not conserved throughout the channel. In this brief, we propose improvement, which does away with these inaccuracies.
Keywords:
improved model;
model quasi;
ballistic transport;
quasi ballistic;
transport mosfets;
model
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2017
Link to full text (if available)
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Journal Title: IEEE Transactions on Electron Devices
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!