The dynamic on-resistance ( $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ ) problem widely exists in reduced surface field (RESURF) lateral DMOS (LDMOS), which leads to large conduction losses in the switching application. Analysing… Click to show full abstract
The dynamic on-resistance ($\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ ) problem widely exists in reduced surface field (RESURF) lateral DMOS (LDMOS), which leads to large conduction losses in the switching application. Analysing a 700-V triple RESURF LDMOS, the mechanism of this phenomenon is researched by the analytical model and the experimental results. Building some bridges of the p-type buried layer (Pbury), the charges of the Pbury-N-well capacitance are discharged. The $\text{V}_{\mathrm {{ds}}}$ can be reduced to the static value quickly without the tail. Therefore, the dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ is significantly reduced. Meanwhile, the breakdown voltage is not affected by the Pbury bridge.
