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Analysis of Short-Channel Effects in Junctionless DG MOSFETs

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This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. ${\mathrm {I}}_{\mathsf {ds}}-{\mathrm {V}}_{\mathrm {{g}}}$ curves and ${\mathrm {V}}_{\mathrm {{t}}}$… Click to show full abstract

This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. ${\mathrm {I}}_{\mathsf {ds}}-{\mathrm {V}}_{\mathrm {{g}}}$ curves and ${\mathrm {V}}_{\mathrm {{t}}}$ rolloff generated from the model are validated by 2-D numerical simulations (Technology Computer Aided Design). It is shown that the SCE of JL MOSFETs is inherently worse than that of undoped DG MOSFETs. The SCE worsens with increasing doping concentration in the channel.

Keywords: short channel; channel effects; tex math; mathrm; inline formula

Journal Title: IEEE Transactions on Electron Devices
Year Published: 2017

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