LAUSR

A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode characteristics while guarantees excellent fundamental performance of TMOS. In the blocking state, the P-base region, the trench gate, and the P+ shield at the trench bottom serve as the TLP of the Schottky contact. Each protection assists in depleting the drift region beneath Schottky contact. Benefiting from the self-assembled TLP, the leakage current of the integrated body diode of the ITS-TMOS is significantly reduced. Moreover, the reverse turn-on voltage ( ${V} _{ \mathrm{\scriptscriptstyle ON}}$ ) and the gate charge ( ${Q} _{g}$ ) of the ITS-TMOS are 65% and 18% lower than those of the conventional TMOS, respectively. The improved overall performances make the SiC ITS-TMOS a competitive candidate for high-efficiency and high power density applications.