LAUSR

This paper investigates the influences of various topside cell structures of insulated gate bipolar transistor (IGBT) on the current crowding effect during high current turn-OFF by symmetrical multicell numerical simulations. It is observed that lower breakdown electric field in the drift region can reduce the negative differential resistance in the forward blocking curve and therefore suppress the current crowding effect during high current turn-OFF. We refer to this characteristic as the self-suppressing current crowding effect (SSCCE). Different topside cell structures of IGBT have considerable influence on the SSCCE. A modest increment of the SSCCE by proper topside structure design provides an alternative solution to improve the ruggedness of IGBT, especially for the strong punchthrough or low current gain IGBTs.