LAUSR

In this paper, both planar and mesa homojunction p-i-n HgCdTe electron-avalanche photodiodes (e-APDs) are fabricated and investigated to better understand the dark current transport and electron-avalanche mechanisms of the devices and optimize the structures. The experiment results are agreed well by simulated ${I}$ – ${V}$ characteristics based on established numerical models. Our results show that the multiplication region fabrication process leads to enormous characteristic difference between planar and mesa diodes. Shockley–Read–Hall and trap-assisted tunneling current are the main components of dark current for the planar/mesa junction under low bias voltage, and dark current is mainly influenced by band-to-band tunneling and avalanche current when higher reverse bias is added. In addition, we found that the difference between the uniformity of the electric field distributions in multiplication regions is the primary reason for the differences of the dark current. It was also proved that the dark current of planar e-APDs is dramatically affected by the junction corners, and mesa e-APDs dark current is found to be greatly dependent on the multiplication region thickness. Our work provides a great deal of theoretical basis for dark current formation and the avalanche mechanism of HgCdTe e-APDs.