LAUSR

A simple method for computation of the electron mobility in n-type doped Hg1–xCdxTe structures is proposed. The method is based on the postulate of the existence of donor bands. In our model, the donor bands are assumed to have a Gaussian distribution of density of states characterized by two fitting parameters only: mean value of energy and standard deviation. By using Kronig’s–Penney’s model, we have estimated mean values of electron’s wave vector module in donor bands. This enables the numerical estimation of the donor band electron mobility (DBEM) caused by polarized optical phonon scattering at room temperatures. At 77 K, DBEM is determined by electron scattering in smooth potential caused by fluctuations in the impurity concentration rather than in individual impurity potentials. Conduction band (CB) electron mobility (CBEM) is determined by scattering on ionized impurities (IO) and polar optical phonon scattering. In calculating of IO scattering, the Brooks-Herring theory was applied with modified values of static dielectric constant. Calculated values of DBEM are almost one order of magnitude below CBEM at 77 K.