LAUSR

This paper proposes a synaptic device based on charge-trap flash memory that has good CMOS compatibility and superior reliability characteristics compared with other synaptic devices. Using hot-electron injection and hot-hole injection, we designed operation methods to implement gradual conductance modulation and spike-timing-dependent plasticity. We demonstrate the feasibility of the device for neuromorphic applications through both a device-level technology computer-aided design simulation and a system-level MATLAB simulation. For the first time, we also propose a 3-D stacked synapse array and present the structure, operation, and process methods. The proposed array architecture features a small area and low process cost and could be a novel solution for neuromorphic systems for implementing deep neural networks.