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In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed… Click to show full abstract
In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field.
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2019
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