In this brief, we present an improved model of bulk charge effect for both drain current ( ${I}_{\text {DS}}$ ) and capacitances and its implementation in the industry standard Berkeley… Click to show full abstract
In this brief, we present an improved model of bulk charge effect for both drain current (${I}_{\text {DS}}$ ) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for ${I}_{\text {DS}}$ , and more importantly its derivatives and capacitances too.
