Photo from wikipedia
A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain… Click to show full abstract
A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium–gallium–zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).
Keywords:
threshold voltage;
voltage mobility;
thin film;
series resistance;
mobility enhancement;
film
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!