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Self-rectifying using a pure HfO2 layer with asymmetric structure was realized in Pt/HfO2/n+-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (>105). The… Click to show full abstract
Self-rectifying using a pure HfO2 layer with asymmetric structure was realized in Pt/HfO2/n+-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (>105). The electrostatic effect induced by the asymmetric structure of the HfO2 layer is responsible for the rectifying behavior. This kind of rectifying paves a new way for resolving the sneak current issue in RRAM arrays.
Keywords:
sub;
hfo sub;
sup;
self rectifying;
asymmetric structure
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2019
Link to full text (if available)
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Journal Title: IEEE Transactions on Electron Devices
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!