In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect transistor (ISFET). Based on theory, extensive TCAD device simulations,… Click to show full abstract
In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect transistor (ISFET). Based on theory, extensive TCAD device simulations, and experiments, it is shown that the ISBiT operates at lower gate-voltages with a higher transconductance (
               
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