In this article, we have fabricated organic nonvolatile memory (ONVM) transistors using different thicknesses of poly( $\alpha $ -methyl styrene) ( $\text{P}\alpha $ MS) as tunneling layers on Si substrates… Click to show full abstract
In this article, we have fabricated organic nonvolatile memory (ONVM) transistors using different thicknesses of poly($\alpha $ -methyl styrene) ($\text{P}\alpha $ MS) as tunneling layers on Si substrates with a SiO2 layer of 50 nm. With a tunneling layer thickness of 6 nm, the fabricated devices achieved an operation voltage of −12 V. To this structure, we added a 12-nm-thick poly(vinyl alcohol) (PVA) film as the charge trapping layer. Compared with the devices without an additional trapping layer, the bilayer devices showed a larger memory window of 9.8 V if a programming voltage of 28 V was applied for 1 s, and a memory window of 8 V is reached after a programming time of only 0.2 s. Furthermore, the retention and endurance properties of the bilayer devices were also improved. Above all, using the combination of non-polar and polar polymers as a bilayer electret provides an easy strategy to optimize charge trapping properties for ONVMs.
