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In this article, we report an investigation of the effects of variation in temperature in the range of 300–450 K on the analog performance and harmonic distortion (HD) characteristics of… Click to show full abstract
In this article, we report an investigation of the effects of variation in temperature in the range of 300–450 K on the analog performance and harmonic distortion (HD) characteristics of a Ge-source tunnel FET (TFET) using a numerical device simulator. Variation in the analog performance parameters, such as transconductance, intrinsic gain, and output resistance, is found to be small for such a large variation in temperature. HD parameters are also found to be almost insensitive to temperature variation over a good range.
Keywords:
temperature;
source tunnel;
harmonic distortion;
analog performance
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
Link to full text (if available)
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Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!