LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles.
Sign Up to like articles & get recommendations!
Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs
The dV / dt in superjunction metal–oxide–semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a… Click to show full abstract
The dV / dt in superjunction metal–oxide–semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a shorter Miller plateau. In this article, we will show that these asymmetrical turn-on and turn-off characteristics are indirectly detected by the hysteresis of the dynamic gate-to-drain capacitance, ${C}_{\text {GD}}$ . Moreover, this article reveals the mechanisms behind the asymmetrical switching and the origin of the hysteresis, which have been shown to be caused by the difference in the ${C}_{\text {GD}}$ displacement current paths for the turn-off and the turn-on.
Share on Social Media:
  
        
        
        
Sign Up to like & get recommendations! 1
Related content
More Information
            
News
            
Social Media
            
Video
            
Recommended
               
Click one of the above tabs to view related content.