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In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced… Click to show full abstract
In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n junction on the anode side and current filament in the active region. A relaxing electric field on the anode side and a moderated electric field on the cathode side prevent the above-mentioned behavior. These improvements result from controlling the carrier-plasma layer in the n-buffer layer on the cathode side. This article demonstrates the effective n-buffer technology for the power diode that achieves superior dynamic robustness and high operating temperature over 448 K.
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
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