LAUSR

AlN devices have the potential to outperform current GaN devices, especially in the high-voltage region, thanks to AlN’s larger critical electric field and thermal conductivity. In order for the AlN-based power diodes to be realized and performance to be demonstrated, high-quality AlN crystals would be the prerequisite. In this article, significantly improved AlN quality has been demonstrated through high-temperature treatment of AlN thin layers at high temperatures in the range of 1670–1730 °C, followed by regrowth of AlN layers on top. The produced AlN layer shows much improved crystalline quality when compared to AlN layer without thermal treatment. The thermal treatment of AlN nucleation layers recrystallizes the AlN materials and results in a significant reduction of the full-width at half-maximum (FWHM) values of X-ray rocking curves of AlN (002) and (102) planes. The annealing of AlN nucleation also produced much pronounced atomic step features and improves the transmittance for the nucleation layers. Regrowth of AlN templates on such annealed nucleation improves AlN crystalline quality further, producing high-quality templates for power diode applications.