LAUSR

An accurate method for the evaluation of breakdown voltages (BVs) in the superjunction-like (SJ-like) power devices is presented. This brief investigates the conventional SJ (c-SJ), the insulator pillar SJ (I-SJ), and the high-permittivity ( $\text{H}{k}$ ) structures. Based on the numerical calculations of the electric field line (EFL) distribution, the electric field profiles along the EFLs can be accurately obtained. This ensures the accurate determination of the impact ionization integrals and BV. The technology computer-aided design (TCAD) simulations confirm the validity of the proposed method. The proposed method could be of great significance for the optimization of the specific ON-resistance ( ${R} _{ \text {ON,sp}}$ ) and could provide a better understanding of the SJ-like power devices.