LAUSR

Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao–Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in the energy gap of the a-IGZO thin film. The numerical model is successful for the TFT in both the subthreshold regime and the above-threshold regime. In the subthreshold regime, considering that the trapped electron concentration in the deep trap states dominates the Poisson’s equation, the surface-potential-based analytical model is presented. In the above-threshold regime, the threshold-voltage-based analytical model is presented. Applying the smooth function to connect the subthreshold model and the above-threshold model, the analytical compact model is obtained. The compact model is verified by the numerical Pao–Sah model and the available experimental data from 253 to 393 K. Furthermore, the temperature characteristics of the field-effect mobility are discussed.