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The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in… Click to show full abstract
The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in this work. The junction termination featuring the variation of lateral doping (VLD) is revisited for such devices by focusing on the interaction with the passivation material on top. To this purpose, an ideal dielectric (SiO2) is compared with differently-doped diamond-like carbon (DLC) by incorporating the passivation layer in the TCAD setup. The simulation analysis rigorously explains the impact of the DLC material on the layout reoptimization of a specific reference diode.
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
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