LAUSR

Resistive random access memories (RRAMs) have attracted tremendous attention due to their miniaturized size, low power consumption, high response speed, and simple fabrication requirements, which are regarded as a promising candidate for future nonvolatile memories. However, the traditional binary storage RRAMs fail to meet the high-density requirement in the area of big data. One of the ways to overcome this obstacle is to realize multilevel state transitions in a unit RRAM. Herein, we propose a facile spin-coating method to develop a multilevel RRAM based on Al/poly(methyl methacrylate) (PMMA)/ZnO quantum dots (QDs)/PMMA/ZnO QDs/PMMA/fluorine-doped tin oxide (FTO) structure, with the significant merits of typical forming-free bipolar resistive switching behavior, low-power operating voltage, stable endurance, and excellent retention. In specific, the ON/OFF ratio of the proposed ZnO QDs-based device can be adjusted by tuning the concentration of the ZnO QDs. Moreover, a multilevel RRAM performance with distinct four-level resistance states is obtained by varying the compliance current, which demonstrates that the proposed device has a specific application in multilevel data storage. The conductive filament model, combining the enhanced internal field and robust formation of the conductive filament, is introduced to explain the mechanism of the resistive switching behavior and multilevel performance. This work paves a new way for its prospect in constructing high-density data storage RRAMs.