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To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and… Click to show full abstract
To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack’s trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states’ density is presented to explain the origin of the effective trapped carrier concentration expression.
Keywords:
dependent drain;
arrhenius non;
non arrhenius;
arrhenius temperature;
drain;
temperature dependent
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
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Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!