LAUSR

Failure of metal–oxide–semiconductor field-effect transistor (MOSFET) in the nanometer regime has raised concern for the researchers. Although researchers have provided solutions in the form of tunnel FETs and junctionless transistors but due to their fabrication issues, MOSFET remains as the backbone of the very large-scale integration (VLSI) industry. This work is dedicated to the design and study of the novel split-gate MOSFET made up of transition metal dichalcogenide. The proposed design can help in realizing digital gates because the device is used as a single transistor AND gate in this work. The device is analyzed for different conditions like the variation in work function, variation in gate length, variation in spacer oxide, and effect of interface trap charge (ITC) density. Nonequilibrium Green’s Function is used as an elemental model of the transistor to include quantum effects for scaled-down dimensions. This work shows that the proposed device results in a noticeable flow of current only when both the gate terminals are at higher potential, that is, at state “11.” The observed linearity is good enough for the efficient working of the device. Hence, the device can be utilized as AND gate with a lesser area and power dissipation.