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In this work, we demonstrate an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs). Intriguingly, the light output power (LOP) can be remarkably… Click to show full abstract
In this work, we demonstrate an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs). Intriguingly, the light output power (LOP) can be remarkably boosted by 157% in comparison with conventional structure with flat QBs, attributing to the successful enhancement of both electron-blocking capability and hole injection efficiency. More importantly, the device with inverted-V-shaped QBs can greatly accelerate the radiative recombination efficiency, alleviating the efficiency droop to only 3% while this number is as high at 47.1% in conventional DUV LED with flat QBs.
Journal Title: IEEE Transactions on Electron Devices
Year Published: 2020
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