Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the performance and power tradeoffs and process/aging compensation. The… Click to show full abstract
Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the performance and power tradeoffs and process/aging compensation. The effectiveness of back bias is one of the major metrics in the stages of circuit design and runtime feedback. In this article, new closed-form expressions accounting for the interface traps and short channel effects-dependent back gate capability in the UTBB FDSOI device are proposed. The developed model allows the accurate assessment of body factor (
               
Click one of the above tabs to view related content.