In the present work, we have fabricated the bottom-gate top-contact configuration of the pentacene organic thin film transistors (OTFTs) using two different dielectric layers. The effect of scaling of poly(methyl… Click to show full abstract
In the present work, we have fabricated the bottom-gate top-contact configuration of the pentacene organic thin film transistors (OTFTs) using two different dielectric layers. The effect of scaling of poly(methyl methacrylate) (PMMA) and cross-linkable poly(4-vinyl phenol) (PVP) polymer dielectric thickness on the subthreshold slope (SS) in top-contact pentacene OTFTs was investigated. Subthreshold slope improved significantly with the scaling of the thickness of both dielectrics.
               
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