An efficient emission model for radiation problems in integrated circuits (ICs) is required at the early phase of industrial design. Traditional source-reconstruction methods rely exclusively on near-field scanning and lack… Click to show full abstract
An efficient emission model for radiation problems in integrated circuits (ICs) is required at the early phase of industrial design. Traditional source-reconstruction methods rely exclusively on near-field scanning and lack the flexibility needed to handle varying IC work conditions. The proposed hybrid model can build a physical connection to the IC's inherent electric properties; therefore, after simple parameter adjustments, it can be applied to any mode of operation. The complete model consists of two sets of equivalent dipoles; one is converted directly from the current/voltage information distributed along the IC package, while the other initially is solved from linear equations that describe the relationship between the dipoles and scanned fields. Then, they are multiplied by a scaling factor to adapt to varying IC work conditions. The emission behavior of an 8-bit commercial microcontroller was reasonably simulated in full-wave solver under various working conditions. The proposed hybrid equivalent source model correctly predicted the simulated reference fields at each operation mode. The feasibility and flexibility of the proposed modeling method have been well validated.
               
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