In this paper, two switched-capacitor quasi-switched boost inverters (qSBIs) are proposed. By adding one capacitor and one diode to the qSBIs, the proposed inverters achieve high voltage gain with low… Click to show full abstract
In this paper, two switched-capacitor quasi-switched boost inverters (qSBIs) are proposed. By adding one capacitor and one diode to the qSBIs, the proposed inverters achieve high voltage gain with low voltage stress on active switches, capacitors, and diodes. The proposed inverters can extend to n-cell for voltage gain improvement. The operating principle, steady-state analysis, and impedance parameter selections of the proposed inverter are presented. A full comparison between the proposed inverter and other impedance-source inverters is addressed. A 500-W prototype is built to verify the operating theory of the proposed inverter in both the standalone mode and the grid-connected mode. Simulation and experimental results validate the theoretical analysis.
               
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