LAUSR

Nowadays, the semiconductor market is growing exponentially in many sectors and more particularly in the applications of the Internet of Things (IoT) in “harsh” environments. These so-called harsh environments result in difficult operating conditions for electronics. To guarantee the reliability of operations in such environments, the devices must be tested in the specified extreme conditions. In the case of exposure to ionizing radiation, tests are generally carried out on specific facilities such as a cyclotron. Unfortunately, access to this kind of facilities is difficult, expensive, and time-consuming. Consequently, in an industrial environment, semiconductors are usually characterized ante- and post-irradiation up to a specific dose, which provides information about drifts in dc parameters but does not help to check any transient effect. This article proposes a portable 3-D printed test set-up allowing to realize this transient measurement while ensuring no interaction with the outside world. Moreover, the setup proposes a variation of distance to favor or not the interaction of the semiconductor with the ionizing radiation source. The main advantages of the proposed 3-D setup are its adaptability to any kind of radiation source geometry as well as its low encumbrance. These enable the possibility to use any local radiation source, other than accelerators, available in smaller facilities. Finally, a complete methodology is proposed to characterize the transient phenomena during the interaction of ionizing radiation with the semiconductor target, in order to validate the setup.