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The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as… Click to show full abstract
The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6–20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.
Journal Title: IEEE Transactions on Microwave Theory and Techniques
Year Published: 2017
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