LAUSR

This paper aims to effectively integrate a GaN amplifier into a high-efficiency active-antenna design. In this paper, the antenna is designed for a GaN high-electron-mobility-transistor (HEMT) impedances calculated by a load–pull simulation with a GaN nonlinear model, which contributes to a lossless design and prevents power-added-efficiency (PAE) reduction by active-antenna integration. The antenna impedance is selected to reduce the impedance-transform ratio with the GaN HEMT. In addition, the active antenna includes a second-harmonic-tuning circuit for high efficiency. The active antenna comprises antenna- and amplifier-circuit layers piled onto a Peltier unit, which has a high affinity with this cooling systems. The antenna and amplifier circuits are designed on low- and high-dielectric substrates, respectively, enabling the amplifier to be downsized and the antenna gain to be increased. Each layer is connected by a through-hole. First, the single-stage amplifier is fabricated with a maximum output power of 37.95 dBm and a maximum PAE of 62.94%. Next, the GaN active antenna is fabricated with a maximum effective isotropically radiated power of 44.61 dBm and a maximum antenna gain of 23.99 dBi. The assumed amplifier large-signal characteristics of the active antenna agree with those of the single-stage amplifier. Therefore, the amplifier and the antenna are integrated without loss.