LAUSR

Electric-field-induced magnetization switching in multiferroics holds profound promise for ultralow energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a binary bit of information and switching between the two stable states allows us to process digital information. However, it requires to process continuous analog signals too for seamless integration of nanomagnetic devices in our future information processing systems. Here, we show that it is possible to harness the analog nature in the magnetostrictive nanomagnets, contrary to writing a digital bit of information. By solving stochastic Landau–Lifshitz–Gilbert equation of magnetization dynamics at room temperature, we demonstrate such possibility and show that there exists a transistor-like high-gain region in the input–output characteristics of the magnetostrictive nanomagnets in strain-mediated multiferroic composites. This can be the basis of ultralow energy analog and mixed-signal precessing in our future information processing systems and it eliminates the requirement of using charge-based transistors.