In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high $I_{\rm on}/ I_{\rm off}$ of $ \text{5.7}\,… Click to show full abstract
In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high $I_{\rm on}/ I_{\rm off}$ of $ \text{5.7}\, \times \,\text{10}^{5}$ and a high $\mu _{{\rm{FE}}}$ of ${\text{10.7 cm}}^{2}\,{\text{V}}^{-1}\,{\text{s}}^{-1}$. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of $\rm{6.6}\,\times\,10^{3}$, a low threshold voltage of −0.13 V, and a very high field-effect mobility of ${\text{28 cm}}^{2}\,{\text{V}}^{-1}\,{\text{s}}^{-1}$. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p -type TFTs under the same device process.
